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| MUBW 20-06 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 1 D12 D13 2 D14 D15 7 3 D16 14 23 24 8 NTC T7 22 D7 T1 16 15 6 T2 11 10 D2 12 D1 T3 18 17 T4 D3 T5 20 19 T6 13 D5 5 D4 4 D6 9 Three Phase Rectifier VRRM = 1600V IDAVM = 36 A IFSM = 300 A Brake Chopper VCES = 600 V IC25 = 25 A VCE(sat) = 1.9 V Three Phase Inverter VCES = 600 V IC25 = 35 A VCE(sat) = 1.9 V Application: AC motor drives with q Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = 80C; sine 180 TC = 80C; rectangular; d = 1/3 TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Conditions Maximum Ratings 1600 25 24 300 100 V A A A W q q Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation Features q q q Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.4 1.3 1.2 1 1.6 0.15 V V mA mA s 1.3 K/W q VF IR trr RthJC IF = 20 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C VR = 100 V; IF = 15 A; di/dt = -15 A/s (per diode) q q High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. (c) 2001 IXYS All rights reserved 1-8 105 MUBW 20-06 A7 Output Inverter T1 - T6 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 47 ; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Maximum Ratings 600 20 30 35 25 ICM = 40 VCEK VCES 10 125 V V V A A A s W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at TJ = 125C) V0 = 1.12V; R0 = 0.11 m T1 - T6 / D1 - D6 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.9 V; R0 = 65 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.09 V; R0 = 12 m T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.99 V; R0 = 81 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.07 V; R0 = 23 m Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.4 200 50 55 300 30 0.92 0.68 1100 65 2.3 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 20 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.5 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Thermal Response Inductive load, TVJ = 125C VCE = 300 V; IC = 20 A VGE = 15 V; RG = 47 D11 - D16 Rectifier Diode (typ.) Cth1 = 0.106 J/K; Rth1 = 1.06 K/W Cth2 = 0.79 J/K; Rth2 = 0.239 K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.108 J/K; Rth1 = 0.79 K/W Cth2 = 0.921 J/K; Rth2 = 0.209 K/W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 300V; VGE = 15 V; IC = 20 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 35 24 A A Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.766 K/W Cth2 = 0.636 J/K; Rth2 = 0.344 K/W T7 / D7 Symbol VF IRM trr RthJC Conditions IF = 20 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = -400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.1 1.4 13 90 V V A ns 2.1 K/W IGBT (typ.) Cth1 = 0.077 J/K; Rth1 = 1.111 K/W Cth2 = 0.732 J/K; Rth2 = 0.279 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W (c) 2001 IXYS All rights reserved 2-8 MUBW 20-06 A7 Brake Chopper T7 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 68 ; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 68 ; TVJ = 125C non-repetitive TC = 25C Conditions Maximum Ratings 600 20 30 25 18 ICM = 30 VCEK VCES 10 90 V V V A A A s W Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.1 4.5 0.3 200 30 50 270 40 0.7 0.5 800 57 2.3 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.39 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 15 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 15 A VGE = 15 V; RG = 68 VCE = 25 V; VGE = 0 V; f = 1 MH z VCE= 300 V; VGE = 15 V; IC = 15 A Brake Chopper D7 Symbol VRRM IF25 IF80 Symbol VF IR IRM trr RthJC (c) 2001 IXYS All rights reserved Conditions TVJ = 25C to 150C TC = 25C TC = 80C Conditions IF = 15 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C IF = 10 A; diF/dt = -400 A/s; TVJ = 125C VR = 300 V Maximum Ratings 600 22 15 V A A Characteristic Values min. typ. max. 2.2 1.5 0.06 0.07 11 80 V V mA mA A ns 3.2 K/W 3-8 MUBW 20-06 A7 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Dimensions in mm (1 mm = 0.0394") Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 Conditions Operating Maximum Ratings -40...+125 150 -40...+125 2500 2.7 - 3.3 C C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Characteristic Values min. typ. max. 5 m mm mm K/W g (c) 2001 IXYS All rights reserved 4-8 MUBW 20-06 A7 Input Rectifier Bridge D11 - D16 60 A 50 IF 40 TVJ= 125C TVJ= 25C 160 A 50Hz, 80% VRRM 140 120 IFSM 100 80 60 TVJ= 125C 40 10 20 0 0.001 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t TVJ= 125C TVJ= 45C 103 A2s I2t TVJ= 45C 30 20 0 0.0 0.4 0.8 1.2 VF 1.6 V 2.0 Fig. 1 Forward current versus voltage drop per diode 600 W 500 Ptot 400 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 80 A 300 200 RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 60 Id(AV) 40 20 100 0 0 20 40 60 80 100 120 A Id(AV)M 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 4 1 1.4 K/W 1.2 1.0 ZthJC 0.8 0.6 0.4 0.2 Power dissipation versus direct output current and ambient temperature, sin 8 0 Fig. 5 Max. forward current versus case temperature DWFN17-16 0.0 0.001 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case (c) 2001 IXYS All rights reserved 5-8 MUBW 20-06 A7 Output Inverter T1 - T6 / D1 - D6 60 50 A IC VGE= 17V 15V 13V 60 50 A IC 40 11V VGE= 17V 15V 13V 11V 40 30 20 10 0 0 1 2 3 4 VCE 5 V 9V TVJ = 25C 30 20 10 0 9V TVJ = 125C 6 0 1 2 3 4 VCE 5V 6 Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics 60 50 A IC IF 50 A 40 30 40 30 20 20 TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 25C 10 0 4 6 8 10 12 VGE VCE = 20V 10 0 0.0 14 V 16 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode # ns ' $ TVJ = 125C VR = 300V IF = 30A IRM MUBW2006A7 20 V 50 40 A IRM 15 VGE trr trr 30 10 20 5 VCE = 300V IC = 50A 10 0 ! 0 0 20 40 60 QG nC 80 0 200 400 600 800 A/s -di/dt 1000 Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of free wheeling diode (c) 2001 IXYS All rights reserved 6-8 MUBW 20-06 A7 Output Inverter T1 - T6 / D1 - D6 4 mJ Eon VCE = 300V VGE = 15V RG = 47 TVJ = 125C 80 Jd(on) Jr ns 60 t 40 2.0 mJ Eoff 1.5 VCE = 300V VGE = 15V RG = 47 TVJ = 125C 400 Jd(off) ns 300 t 200 3 2 1.0 Eoff 1 Eon 20 0.5 Jf 100 0 0 10 20 30 IC 40 A 0 0.0 0 10 20 30 IC 40 A 0 Fig. 13 Typ. turn on energy and switching times versus collector current 1.6 mJ Eon 1.2 VCE = 300V VGE = 15V IC = 20A TVJ = 125C Fig. 14 Typ. turn off energy and switching times versus collector current 1.00 mJ t 500 ns 375 t Jd(on) Jr 80 ns 60 0.75 Eoff 0.50 VCE = 300V VGE = 15V IC = 20A TVJ = 125C Eoff 0.8 Eon 40 Jd(off) 250 0.4 20 0.25 Jf 125 0.0 0 20 40 60 80 RG 0 100 120 0.00 0 20 40 60 80 RG 0 100 120 Fig. 15 Typ. turn on energy and switching times versus gate resistor 50 A 10 K/W ZthJC 1 Fig.16 Typ. turn off energy and switching times versus gate resistor diode IGBT 40 ICM 30 20 10 0 0 100 200 300 400 500 600 VCE 700 V 0.1 0.01 single pulse RG = 47 TVJ = 125C 0.001 0.0001 0.00001 0.0001 0.001 MUBW2006A7 0.01 0.1 t 1 s 10 Fig. 17 Reverse biased safe operating area RBSOA Fig. 18 Typ. transient thermal impedance (c) 2001 IXYS All rights reserved 7-8 MUBW 20-06 A7 Brake Chopper T7 / D7 50 40 A IC 20 16 A 12 TVJ = 25C TVJ = 125C TVJ = 125C TVJ = 25C IF 30 20 10 VGE = 15V 8 4 0 0 0 1 2 3 4 VCE 5 V6 0 1 2 VF V 3 Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of free wheeling diode 300 1.5 mJ Eoff Jd(off) VCE = 300V VGE = 15V RG = 68 TVJ = 125C 0.8 mJ t Eoff 0.6 VCE = 300V VGE = 15V IC = 15A TVJ = 125C 400 Jd(off) ns 300 t ns 200 1.0 0.4 100 Eoff 200 0.5 Eoff Jf 0.2 Jf 100 0.0 0 5 10 15 20 25 IC 0 30 A 35 0.0 0 20 40 60 80 0 100 120 RG Fig. 21 Typ. turn off energy and switching times versus collector current 10 K/W 1 ZthJC 0.1 R 0.01 0.001 single pulse diode IGBT Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 10000 1000 0.0001 0.00001 0.0001 0.001 100 0.01 0.1 t 1 s 10 0 25 50 75 100 T MUBW2006A7 125 C 150 Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus temperature (c) 2001 IXYS All rights reserved 8-8 |
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